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Product classification
Pressure Sensors
Gas Sensors
Infrared (UV) Sensors
Temperature & Humidity
Current Sensors
Other Sensors
 
Infrared (UV) Sensors  
ƷƣHamamatsu infrared photoelectric sensor S2386-44K

Hamamatsu infrared photoelectric sensor S2386-44K



Product introduction
Hamamatsu infrared photoelectric sensor S2386-44K
l High sensitivity
l Low dark current
l High reliability
l High linearity
Applications
l Analytical equipment
l Optical measurement equipment
P H O T O D I O D E
Si photodiode
For visible to IR, general-purpose photometry
S2386 series
 General ratings / Absolute maximum ratings
Absolute maximum ratings
Package Active
area size
Effective
active area
Reverse
voltage
VR Max.
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Dimensional
outline/
Window
material *
(mm) (mm) (mm2) (V) (C) (C)
S2386-18K ➀/K
S2386-18L ➁/L
TO-18 1.1 1.1 1.2
S2386-5K 2.4 2.4 5.7
S2386-44K
➂/K
3.6 3.6 13
S2386-45K ➃/K
TO-5
3.9 4.6 17.9
S2386-8K ➄/K TO-8 5.8 5.8 33
30 -40 to +100 -55 to +125
 Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted)
Photo sensitivity
S
(A/W)
Spectral
response
range

Peak
sensitivity
wavelength
p
Short circuit
current
Isc
100 lx
Dark
current
ID
VR=10 mV
Max.
Temp.
coefficient
of ID
TCID
Rise time
tr
VR=0 V
RL=1 k
Terminal
capacitance
Ct
VR=0 V
f=10 kHz
Shunt
resistance
Rsh
VR=10 mV
NEP
VR=0 V
Type No. =p
(nm) (nm)
p
GaP
LED
560 nm
He-Ne
laser
633 nm
GaAs
LED
930 nm
Min.
(A)
Typ.
(A) (pA) (times/ C) (s) (pF)
Min.
(G)
Typ.
(G) (W/Hz1/2)
S2386-18K 1 1.3
S2386-18L 4 5.7
2 0.4 140 5 100 6.8 10-16
S2386-5K 4.4 6.0 5 1.8 730 2 50 9.6 10-16
S2386-44K 9.6 12 20 3.6 1600 0.5
S2386-45K 12 17 30 5.5 2300 0.3
25 1.4 10-15
S2386-8K
320 to 1100 960 0.6 0.38 0.43 0.59
26 33 50
1.12
10 4300 0.2 10 2.1 10-15
* Window material K: borosilicate glass, L: lens type borosilicate glass
 
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